Stacked integrated chips and methods of fabrication thereof

ABSTRACT

Structure and methods of forming stacked semiconductor chips are described. In one embodiment, a method of forming a semiconductor chip includes forming an opening for a through substrate via from a top surface of a first substrate. The sidewalls of the opening are lined with an insulating liner and the opened filled with a conductive fill material. The first substrate is etched from an opposite bottom surface to form a protrusion, the protrusion being covered with the insulating liner. A resist layer is deposited around the protrusion to expose a portion of the insulating liner. The exposed insulating liner is etched to form a sidewall spacer along the protrusion.

This application is a continuation of U.S. patent application Ser. No.12/613,408, filed on Nov. 5, 2009, which claims the benefit of U.S.Provisional Application No. 61/144,389 filed on Jan. 13, 2009, entitled“Stacked Integrated Chips and Methods of Fabrication Thereof,” whichapplication is hereby incorporated herein by reference.

TECHNICAL FIELD

The present invention relates generally to integrated chips, and moreparticularly to stacked integrated chips and methods of fabrication ofstacked integrated chips.

BACKGROUND

Semiconductor devices are manufactured by forming active regions in asemiconductor substrate, depositing various insulating, conductive, andsemiconductive layers over the substrate, and patterning them insequential steps. The upper or last-formed layers of the semiconductordevice typically comprise metallization layers. The metallization layerstypically comprise one or more layers of metal interconnect havingconductive lines disposed within an insulating material and may provideconnections to underlying active regions and connections within and overthe substrate. Integrated circuit chips may be attached to a lead frameand then packaged in a ceramic or plastic carrier.

As the cost of shrinking semiconductor devices continues to increase,however, alternative approaches, such as extending the integration ofcircuits into the third dimension or semiconductor substrate stackingare being explored. Two or more substrates are bonded together to form athree-dimensional structure. The active circuitry of the stackedsubstrates are coupled through one or more through substrate vias.

However, three-dimensional integration introduces many challenges tofabrication. One of the challenges in three-dimensional integrationinvolves forming joints between the stacked substrates without formingadditional shorts or leakage paths.

The through substrate vias used for coupling the substrates areinsulated from the substrate by a dielectric layer. However, anelectrical short between the underlying substrate and the throughsubstrate via, for example, formed during the joint formation processcan result in deleterious process yield and is hence undesirable.

Hence, what are needed are cost efficient means of stackingsemiconductor substrates without compromising on process yield.

SUMMARY OF THE INVENTION

These and other problems are generally solved or circumvented, andtechnical advantages are generally achieved, by preferred embodiments ofthe present invention.

Embodiments of the invention include stacked semiconductor chips. Inaccordance with a preferred embodiment of the present invention, amethod of forming a semiconductor chip comprises forming an opening fora through substrate via from a top surface of a first substrate, andlining sidewalls of the opening with an insulating liner. The methodfurther comprises filling the opening with a conductive fill material,and etching the first substrate from an opposite bottom surface to forma protrusion, the protrusion being covered with the insulating liner. Aresist layer is then deposited around the protrusion to expose a portionof the insulating liner. The exposed insulating liner is etched to forma sidewall spacer along the protrusion.

The foregoing has outlined, rather broadly, the features of anembodiment of the present invention in order that the detaileddescription of the invention that follows may be better understood.Additional features and advantages of embodiments of the invention willbe described hereinafter, which form the subject of the claims of theinvention. It should be appreciated by those skilled in the art that theconception and specific embodiments disclosed may be readily utilized asa basis for modifying or designing other structures or processes forcarrying out the same purposes of the present invention. It should alsobe realized by those skilled in the art that such equivalentconstructions do not depart from the spirit and scope of the inventionas set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1, which includes FIGS. 1 a-1 m, illustrates a stacked integratedchip comprising through substrate vias during fabrication, in accordancewith an embodiment of the invention;

FIG. 2, which includes FIGS. 2 a-2 e, illustrates a stacked integratedchip comprising through substrate vias during fabrication, in accordancewith an embodiment of the invention; and

FIG. 3, which includes FIGS. 3 a and 3 b, illustrates a stackedintegrated circuit formed using embodiments of the invention.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The through substrate vias are insulated from the substrate by adielectric layer. A through substrate via from one chip is joined to asuitable landing pad or an under bump structure of another substrateusing, for example, solder balls. However, some of the conductivematerials used in the joining process may form a conductive stringbetween the joint and the substrate thus electrically coupling thethrough substrate via to the substrate. In various embodiments, theinvention avoids this electrical shorting by the use of a sidewallspacer that only exposes a portion of the through substrate via duringjoint formation, and hence inhibits the formation of an electricalstring between the substrate and the joint.

FIGS. 1 and 2 illustrate embodiments of forming stacked integratedchips, while FIG. 3 illustrates a stacked integrated chip.

FIG. 1, which includes FIGS. 1 a-1 m, illustrates a stacked integratedchip comprising through substrate via during fabrication, in accordancewith an embodiment of the invention.

Referring to FIG. 1 a, active device regions 11 are formed on a sidenear a top surface of a substrate 10 during front end processing. Thesubstrate 10 is typically a semiconductor wafer. The active deviceregions 11 or active circuitry can include transistors, resistors,capacitors, inductors or other components used to form integratedcircuits. For example, active areas that include transistors (e.g., CMOStransistors) can be separated from one another by isolation regions,e.g., shallow trench isolation. In an alternative embodiment, the activedevice regions 11 comprise bipolar transistors.

Referring to FIG. 1 a, examples of the substrate 10 include a bulkmono-crystalline silicon substrate (or a layer grown thereon orotherwise formed therein), a layer of {110} silicon on a {100} siliconwafer, a layer of a silicon-on-insulator (SOI) wafer, or a layer of agermanium-on-insulator (GeOI) wafer. In other embodiments othersemiconductors, such as silicon germanium, germanium, gallium arsenide,indium arsenide, indium gallium arsenide, indium antimonide or others,can be used with the wafer.

Isolation trenches are formed in the substrate 10. Conventionaltechniques may be used to form the isolation trenches. For example, ahard mask layer (not shown here), such as silicon nitride, can be formedover the substrate 10 and patterned to expose the isolation areas. Theexposed portions of the substrate 10 can then be etched to theappropriate depth, which is typically between about 200 nm and about 400nm. The isolation trenches are filled with an isolating material therebyforming shallow trench isolation 15. Gate dielectrics are depositedfollowed by the formation of a gate stack 12. The gate stack 12comprises a semiconductor material, such as polysilicon or metallic orsilicide materials. The source/drain extensions, source/drain, andchannel regions are doped with implant and anneal processes to form thetransistors 13.

Next, metallization is formed over the active device regions 11 toelectrically contact and interconnect the active device regions 11. Themetallization and active circuitry together form a completed functionalintegrated circuit. In other words, the electrical functions of the chipcan be performed by the interconnected active circuitry. In logicdevices, the metallization may include many layers, e.g., nine or more,of copper. In memory devices, such as DRAMs, the number of metal levelsmay be less and may be aluminum.

The components formed during the front-end processing are interconnectedby back end of line (BEOL) processing. During this process, contacts aremade to the semiconductor body and interconnected using metal lines andvias. As discussed above, modern integrated circuits incorporate manylayers of vertically stacked metal lines and vias (multilevelmetallization) that interconnect the various components in the chip.

Referring now to FIG. 1 b, a first insulating material layer 21 isformed over an etch stop liner. The etch stop liner is deposited overthe substrate 10 before depositing the first insulating material layer21 to also protect the underlying substrate during contact plugformation. For example, a nitride film (e.g., silicon nitride) isdeposited as an etch stop liner.

The insulating material layer 21 preferably comprises insulatingmaterials typically used in semiconductor manufacturing for inter-leveldielectric (ILD) layers, such as SiO₂, tetra ethyl oxysilane (TEOS),fluorinated TEOS (FTEOS), doped glass (BPSG, PSG, BSG), organo silicateglass (OSG), fluorinated silicate glass (FSG), spin-on glass (SOG), SiN,SiON. The ILD may also comprise suitable low k or ultra-low k (ULK)materials. The ILD may comprise a thickness of about 500 nm or less, forexample, although alternatively, the ILD may comprise other dimensions.

In regions with substrate contact plugs, the first insulating materiallayer 21 and the etch stop liner are patterned and etched. The substratecontact plugs 22 are made of a multilayer structure comprising a firstconductive liner (e.g. CVD titanium nitride and silicon doped tungsten)and a first conductive material (e.g. tungsten).

Referring now to FIG. 1 c, a second insulating material layer 31 is thendeposited over the first insulating material layer 21. The secondinsulating material layer 31 preferably comprises a low-k dielectricmaterial having a dielectric constant of 3.6 or less, and may requireheating, e.g., up to 400 degrees C. to remove solvents. The secondinsulating material layer 31 is patterned via lithography, e.g., with amask. A photoresist is deposited over the second insulating materiallayer 31, and portions of the photoresist are exposed, developed andremoved, leaving a pattern for a metal line. The exposed secondinsulating material layer 31 is removed to form opening in the secondinsulating material layer 31.

A second conductive liner is preferably deposited using a conformaldeposition process, leaving a conformal liner or diffusion barrier alongthe interior walls of opening. Preferably the second conductive linercomprises tantalum nitride deposited by plasma vapor deposition (PVD).Alternatively, the second conductive liner may comprise titaniumnitride, tungsten nitride, a refractory metal or other barrier layersthat may be conformally deposited, for example, using CVD, PVD processesor electro-less plating. The second conductive liner may comprise abi-layer of material, including, for example, a barrier layer and aconformal seed layer, which preferably comprises copper, aluminum, othermetals or combinations thereof. The seed layer may be deposited using aCVD process, for example.

The remainder of the opening is filled with a second conductive material32, for example, using an electroplated fill process to form a firstmetal line level (M1) having a portion residing within the secondinsulating material layer 31 and a portion residing over the firstinsulating material layer 21. The second conductive material 32preferably comprises copper, aluminum or other metals or combinationsthereof.

A third insulating material layer 41 is deposited over the secondinsulating material layer 31. The third insulating material layer 41 ispatterned and etched to create via holes. The via holes are filled witha third conductive material 42 such as copper to form first via level(V1). Similarly, more number of metal line levels and via levels areformed above the first via level (V1). For example, in FIG. 1 c, fourth,fifth, sixth, seventh, and eighth insulating material layers 51, 61, 71,81, and 91 comprising second metal line level (M2), second via level(V2), third metal line level (M3), third via level (V3), and fourthmetal line level (M4) are formed. Further levels of metal lines M₂, M₃,M₄, etc and via levels V₂, V₃, etc. could proceed as discussed above byrepeating the process for formation of metal lines and vias.

As illustrated in FIG. 1 d, a passivation layer 111 is deposited overthe last metal line (fourth metal line level M4). The passivation layer111 is an insulating layer and typically comprises an oxide layer or anoxide/nitride layer stack. In other embodiments, the passivation layer111 may comprise silicon nitride, or silicon oxynitride, FTEOS, SiCOH,or combinations thereof with polyimide, photoimide, BCB or other organicpolymers. An optional insulating liner is disposed above the passivationlayer 111. The optional insulating liner comprises a nitride layer, inone embodiment. In various embodiments, the optional insulating linermay comprise FTEOS, SiO₂, SiCOH, or other low-k materials.

A hard mask layer 121 is formed over the passivation layer 111 (FIG. 1d). In various embodiments, the hard mask layer 121 is coated, forexample, by a spin-on process or applied using a chemical vapordeposition process. In various embodiments, the hard mask layer 121comprises a nitride, organic polymer, BCB, polyimide, photoimide orinorganic dielectric.

In some embodiments, the hard mask layer 121 is also photo sensitive andcan be directly exposed using photolithography. Examples ofphoto-sensitive hard mask layer 121 include photo-sensitive polyimidesthat can be directly developed. In case of a non-photo-sensitivepolyimide, a photo resist is deposited. Using a photolithographyprocess, the hard mask layer 121 and the passivation layer 111 arepatterned to form a pattern for forming through substrate vias (FIG. 1d).

Using the patterned hard mask layer 121, the metallization levels andsubstrate 10 are etched, as shown in FIG. 1 e, to form a throughsubstrate via (TSV) opening 131. In various embodiments, multiple etchchemistries may be used to etch through the various insulating layers(which may comprise different materials).

Referring again to FIG. 1 e, a high density plasma process in an RFplasma chamber is used to form the TSV opening 131. In one embodiment, ahighly anisotropic etch is used to form a TSV opening 131. In otherembodiments, other types of etch processes may be used, includingprocesses using simultaneous bottom etch and sidewall passivation.

In one embodiment, an etch step is carried out using a fluorine basedplasma. However, fluorine based etches are isotropic and result in nonvertical trench sidewalls. Hence, a deposition step is carried out byintroducing a polymer producing gas into the plasma chamber. The polymerproducing gas deposits a polymer layer on the exposed sidewalls forminga temporary etch stop layer. The polymer layer is not formed on theexposed bottom surface of the trench due to the high energy of theimpinging ions. Any polymer deposited on the bottom surface of thetrench is broken up by the high energy of the impinging ions. Thethrough substrate opening etch process is carried out in sequential etchand deposition steps. A vertical trench may thus be produced. Forexample, the fluorine etch step may comprise an SF₆ etchant, whereas thepolymer producing gas may comprise C₄F₈. The etch and deposit steps maybe repeated many times, e.g., about 100 times to about 500 times, toform the TSV opening 131. In other embodiments, other types of reactionion etch processes may be used.

The top of the TSV opening 131 comprises a width of about 2 μm to about20 μm. The TSV opening 131 thus produced comprises a high aspect ratioopening in the range from about 1:3 to about 1:30 (ratio of width todepth).

As next illustrated in FIG. 1 f, the TSV opening 131 is lined with aninsulating liner 141, which is formed on the sidewalls of the TSVopening 131. The insulating liner 141 electrically insulates the activedevice regions 11 from the through substrate via (to be formed). Theinsulating liner 141 may comprise silicon oxide, silicon nitride,silicon oxynitride, SiC, SiCN, a dense or porous low k or ultra low kdielectric material, an organic material or polymere like parylene, BCB,SiLK or others. In some embodiments, the insulating liner 141 isanisotropically etched forming a sidewall spacer.

As illustrated in FIG. 1 f, a trench liner 142 is deposited on theinsulating liner 141. A trench liner 142 comprising one or multiplemetal liners is deposited over the insulating liner 141. The trenchliner 142 is at least continuously deposited over the insulating liner141, and ideally conformal. The trench liner 142 may comprise a singlelayer or multiple layers. In various embodiments, the trench liner 142comprises Ta, TaN, W, WN, WCN, WSi, Ti, TiN, Ru, Cu, and combinationsthereof. The trench liner 142 is used in some embodiments as a barrierlayer for preventing metal from diffusing into the underlying substrate10 and the insulating liner 141.

The trench liner 142 metal liner is formed using a chemical vapordeposition process, a plasma enhanced CVD process, a plasma vapordeposition process, or a combination of both, although in otherembodiments other processes may be used.

The trench liner 142 comprises a Ti/TiN layer or Ta/TaN layer and acopper seed layer. For example, a 5-30 nm titanium layer is depositedfollowed by a deposition of about a 10-100 nm TiN layer, and a 50-1000nm copper seed layer.

Referring to FIG. 1 g, a conductive fill material 145 is deposited intothe TSV opening 131 and planarized. In various embodiments, theconductive fill material 145 is electroplated over the trench liner 142.The conductive fill material 145 comprises a conductive material, suchas copper or alternatively, aluminum, tungsten, silver, gold or dopedpolysilicon. In various embodiments, the conductive fill material 145comprises copper. A post chemical mechanical polishing (CMP) clean isnext performed to remove any slurry residuals.

Alternatively, the planarization process comprises a CMP. The CMPprocess removes the conductive fill material 145 and the underlyingtrench liner 142 from over the passivation layer 111. In variousembodiments, the polishing process stops on the insulating liner 141and/or passivation layer 111. Subsequently, redistribution lines areformed over the passivation layer 111.

The conductive fill material 145 over the passivation layer 111 ispatterned forming bond pads 151 (FIG. 1 h). Referring to FIG. 1 h, atenth insulating material layer 152 is deposited over the passivationlayer 111 and planarized. A polyimide material 156, or the like, maythen be deposited and patterned forming an under metallization bump(UMB) structure 155. A carrier (not shown) is then attached to thesubstrate, for example, by depositing an adhesive material layer on thepolyimide material 156.

Referring to FIG. 1 i, the substrate 10 is thinned from the back side,for example, by flipping over and grinding, lapping, polishing, and/oretching processes. The substrate 10 is etched so that a section of thethrough substrate via 2 is exposed forming a protrusion 161.

A wet etch process preferably used that has a high substrate 10 toinsulating liner 141 selectivity. A selectivity of greater than 10:1 maybe employed, however, a substrate 10 to insulating liner etchselectivity of greater than 20:1 is preferred. The high selectivity ofthis wet etch chemistry causes the substrate 10 to etch at a faster ratethan the insulating liner 141. Thus, the insulating liner 141 protectsthe underlying conductive fill material 145 and trench liner 142 alsofrom etching during the wet etch process thus forming a protrusion 161that protrudes from the substrate 10. In one embodiment, the substrate10 is etched, for example, using a wet etch chemistry comprising nitricacid, water, acetic acid, and hydrofluoric acid. The protrusion extendsto a first distance L from the substrate 10. The first distance L isabout 2 um to about 35 um in various embodiments.

Referring next to FIG. 1 j, a resist layer 171 is coated, for example,using a spin on coating process. The resist layer 171 forms a thin layerand covers a first portion of the insulating liner 141 and trench liner142. The thickness of the resist layer 171 can be controlled to a seconddistance H. The use of the resist layer 171 enables an accurate controlof this second distance H and hence the subsequently formed TSV sidewallspacer. The resist layer 171 is selected such that a suitable wetetchant may be used to etch the exposed portion of the insulating liner141, without significantly etching the organic layer 171. In variousembodiments, the resist layer 171 comprises a material such as a photoresist material or other suitable materials such as bottomantireflective coating, low k dielectrics, extreme low k dielectrics, orporous insulator materials.

Referring again to FIG. 1 i, the exposed insulating liner 141 is etchedusing a wet etch process. In one embodiment, the insulating liner 141 isremoved using a wet etch chemistry comprising buffered HF (NH₄F:HF). Thewet etch chemistry is selected such that the insulating liner 141 isetched without removing the resist layer 171.

As shown in FIG. 1 k, the resist layer 171 is removed subsequentlyforming a first portion of the protrusion 161 a and a second portion ofthe protrusion 161 b. The first portion of the protrusion 161 a includesthe insulating liner 141 and hence forms a protected TSV sidewallspacer. The protected TSV sidewall spacer is an advantage of anembodiment, in that the conductive fill material 145 is protected fromoxidation by the un-etched isolation liner 141, thus eliminating a causeof current leakage. It also minimizes any shorting from the protrudingTSV 50 to the substrate 10 during subsequent processing. Further, thethickness of the sidewall spacer (height of the first portion of theprotrusion 161 a) is tightly controlled as the coating process todeposit the resist layer 171 and the etching rates of the resist layer171 are well characterized. The thickness of the resist layer 171primarily determines the height of the sidewall spacer and being acoating process can be controlled well.

Turning to FIG. 11, the substrate 10 may be diced at this step, althoughoptionally in some embodiments, the substrate is diced at a later stage.The second portion of the protrusion 161 b of the protruding TSV 50 iselectro-plated with a wetting layer 181, for example, an electrolessnickel/gold layer or other metal finish process. The wetting layer 181is not formed on the insulating liner 141 of the first portion of theprotrusion 161 a. Thus, shorting of the wetting layer 181 to thesubstrate 10 is advantageously avoided. The wetting layer 181 protectsthe underlying nickel and conductive fill material 145 from oxidation.The nickel is used as a wetting agent during subsequent solderformation. Thus, the protruding TSV 50 is substantially protected fromoxidation by either the insulating liner 145 or the wetting layer 181.The substrate 10 is next coated with an under-fill layer 182. Theunder-fill layer 182 may comprise a polymer, for example. There areseveral types of under-fill materials with differing properties relativeto thermal transfer and mechanical properties. All under-fill materialsare within the scope of these embodiments.

Referring to FIG. 1 m, a die 200 is bonded to the TSV 50 of the dicedsubstrate 190 using a bonding reflow process. Solder balls 191 bonds thedie 200 to the substrate 10 by bonding a UMB structure 155 of the die200 to the protruding part of the TSV 50 of the substrate 10. Thebonding process may be accomplished by thermal, thermosonic compression,or the like. The substrate may be processed further with processes knownby those of ordinary skill in the art or the process may then end.

FIG. 2, which includes FIGS. 2 a-2 e, illustrates a stacked integratedchip comprising through substrate via during fabrication, in accordancewith an embodiment of the invention.

Referring to FIG. 2 a, the protruding TSV 50 is formed by first liningan opening with an insulating liner 141, and a conductive trench liner142 and filled with a conductive fill material 145 as described in priorembodiments.

Unlike the prior embodiment, the through substrate via extends only upto the first metal level. For example, in one embodiment, the TSV 50 isalso coupled to the active transistors through the metallization levels.After completion of the last metal level a passivation layer 111 isdeposited.

Referring to FIG. 2 b, a photo resist is deposited over the passivationlayer 111 and patterned to form an opening for conducting pads. Apolyimide material 156, or the like, may then be deposited and patternedforming an UMB structure 155. The TSV 50 is coupled to the UMB structure155 through the metallization levels.

Referring next to FIG. 2 c, the substrate 10 is flipped over and thinnedto form a TSV 50 with a protrusion 161. A resist layer 171 is coated,for example, using a spin on coating process. The resist layer 171 formsa thin layer and covers a first portion of the insulating liner 141 andtrench liner 142. The thickness of the resist layer 171 is controlled toa second distance D. Referring to FIG. 2 d, the exposed insulating liner141 is etched using a wet etch process such that the insulating liner141 is etched without removing the resist layer 171.

As next shown in FIG. 2 e, the resist layer 171 is removed forming afirst portion of the protrusion 161 a and a second portion of theprotrusion 161 b. The first portion of the protrusion 161 a includes theinsulating liner 141 and hence forms a protected TSV sidewall spacer.The substrate 10 is coated with a wetting layer 181 and soldered usingsolder balls 191 to a die 200.

While in this embodiment, the TSV 50 extends from a bottom surface ofthe substrate 10 to the first metal line level M1, in other embodiments,the TSV 50 may extend up to any metallization level or may extend onlyup to the top surface of the substrate 10.

FIG. 3, which includes FIGS. 3 a and 3 b, illustrates a stackedintegrated circuit formed using embodiments of the invention. Referringto FIG. 3 a, a stacked integrated chip 100 comprises a first chip 102, asecond chip 104, a third chip 106, a fourth chip 108, and a fifth chip110. The first, second, third, fourth, and fifth chips 102, 104, 106,108, and 110 may comprise silicon or other semiconductor materials, forexample. Further, substrates, such as the first chip 102, may becomprised of non-semiconductor materials, such as bismaleimide triazine(BT), or the like. The first, second, third, fourth, and fifth chips102, 104, 106, 108, and 110 comprise any suitable type of chipsincluding memory, logic, analog, or combinations thereof.

The first, second, third, fourth, and fifth chips 102-110 may includeone or more conductive layers. There may be multiple metallizationlayers formed within chips 102-110, for example, and the first, second,third, fourth, and fifth chips 102-110 may include a plurality of otherlayers such as inter-poly oxide (IPO) or inter-metal dielectric (IMD)layers (not shown). The first, second, third, fourth, and fifth chips102-110 may also include other active components or circuits. Further,the stacked integrated chip 100 may include additional chips therein(also not shown).

Any or all of first, second, third, fourth, and fifth chips 102-110 maycomprise TSVs 50. The TSVs 50 protrude from a first side of a substrate.The TSVs 50 provide an electrical connection between the first side anda second side of a substrate. At least one of the TSVs 50 in the first,second, third, fourth, and fifth chips 102-110 comprises a sidewallspacer formed in accordance with embodiments described in FIGS. 1 and 2.

FIG. 3 b illustrates the third chip 106 showing the sidewall spacer. Theprotruding TSV 50 comprises a protrusion 161 comprising a first portionof the protrusion 161 a and a second portion of the protrusion 161 b.The first portion of the protrusion 161 a includes the insulating liner141 and hence forms a protected TSV sidewall spacer. The second portionof the protrusion 161 b is in contact with a wetting layer 181 andcoupled to the first chip 102 through the solder ball 191. Theprotrusion 161 is encapsulated in an under-fill layer 182 such as apolymer material layer.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. For example,it will be readily understood by those skilled in the art that many ofthe features, functions, processes, and materials described herein maybe varied while remaining within the scope of the present invention.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. A semiconductor device comprising: a substratehaving a first side and a second side, the second side being oppositethe first side; a through substrate via (TSV) extending from the firstside to the second side of the substrate, the TSV comprising: aconductive fill material; a liner material surrounding the conductivefill material; and a protrusion from the first side, the protrusioncomprising: a first portion extending a first height from the firstside, the first portion being surrounded by the liner material; and asecond portion having a conductive coating on a first surface of theconductive fill material, the first surface being substantially parallelwith the first side of the substrate, the conductive coating and theliner material being vertically separated by the second portion of theprotrusion; and an underfill material surrounding the protrusion of theTSV.
 2. The semiconductor device of claim 1, wherein the underfillmaterial directly contacts the conductive fill material in the secondportion of the protrusion.
 3. The semiconductor device of claim 1,wherein the first height is less than a total height of the protrusion.4. The semiconductor device of claim 1, wherein the second portion issubstantially free from liner material.
 5. The semiconductor device ofclaim 1, wherein the substrate comprises a semiconductor wafercomprising active circuitry on the second side of the substrate.
 6. Thesemiconductor device of claim 1, wherein the liner material comprises amaterial selected from the group consisting of silicon oxide, siliconnitride, silicon oxynitride, SiC, SiCN, a low k dielectric material, aultra low k dielectric material, and combinations thereof, wherein theconductive fill material comprises a material selected from the groupconsisting of copper, aluminum, tungsten, silver, gold, dopedpolysilicon, and combinations thereof.
 7. The semiconductor device ofclaim 1, further comprising a solder ball on the conductive coating andthe underfill material.
 8. The semiconductor device of claim 1, whereinthe underfill material has a first surface substantially coplanar with afirst surface of the conductive coating.
 9. A semiconductor devicecomprising: a through substrate via (TSV) comprising a conductive fillmaterial extending through a substrate and a first portion of the TSVextending beyond a first surface of the substrate; an insulating linersurrounding the TSV in the substrate, the insulating liner partiallysurrounding the first portion of the TSV; a wetting layer on theconductive fill material of the first portion of the TSV; and anunderfill material surrounding the first portion of the TSV, a portionof the insulating liner, and the wetting layer, the underfill materialcontacting a portion of the conductive fill material.
 10. Thesemiconductor device of claim 9, further comprising a solder ball on thewetting layer and the underfill material, wherein the wetting layercomprises a nickel/gold layer.
 11. The semiconductor device of claim 9,wherein the insulating liner comprises a material selected from thegroup consisting of silicon oxide, silicon nitride, silicon oxynitride,SiC, SiCN, a low k dielectric material, a ultra low k dielectricmaterial, and combinations thereof, wherein the conductive fill materialcomprises a material selected from the group consisting of copper,aluminum, tungsten, silver, gold, doped polysilicon, and combinationsthereof.
 12. The semiconductor device of claim 9, wherein the insulatingliner extends a first height beyond the first surface of the substrate,wherein the first portion extends a second height beyond the firstsurface of the substrate, the second height being greater than the firstheight.
 13. The semiconductor device of claim 9, wherein the wettinglayer does not contact the insulating liner.
 14. A semiconductor devicecomprising: a through substrate via (TSV) comprising a conductive fillmaterial extending through a substrate and a first portion of the TSVextending beyond a first surface of the substrate; an insulating linersurrounding the TSV in the substrate, the insulating liner forming asidewall spacer on the first portion of the TSV; a wetting layer on theconductive fill material of the first portion of the TSV; and anunderfill material surrounding the first portion of the TSV, theunderfill material contacting the sidewall spacer, the conductive fillmaterial, and the wetting layer.
 15. The semiconductor device of claim14, wherein the underfill material has a surface substantially coplanarwith a surface of the wetting layer.
 16. The semiconductor device ofclaim 15 further comprising a solder ball contacting the first surfacesof the wetting layer and the underfill material.
 17. The semiconductordevice of claim 14, wherein the conductive fill material furthercomprises a trench liner, the trench liner contacting a second surfaceof the wetting layer, the second surface being opposite the firstsurface.
 18. The semiconductor device of claim 14, wherein theconductive fill material further comprises a trench liner, the trenchliner being coterminous with the sidewall spacer.
 19. The semiconductordevice of claim 14, wherein the insulating liner comprises a materialselected from the group consisting of silicon oxide, silicon nitride,silicon oxynitride, SiC, SiCN, a low k dielectric material, a ultra lowk dielectric material, and combinations thereof, wherein the conductivefill material comprises a material selected from the group consisting ofcopper, aluminum, tungsten, silver, gold, doped polysilicon, andcombinations thereof.